A linear low noise amplifier is disclosed. In at least one exemplary embodiment, the linear low noise amplifier may include a first metal oxide semiconductor field effect transistor (MOSFET) configured to operate in a triode mode coupled to a second MOSFET configured to operate in a saturation mode. Linearity of the low noise amplifier may be determined, at least in part, by a transconductance associated with the second MOSFET and a channel resistance associated the first MOSFET.