- 专利标题: INTERCONNECT STRUCTURE WITH AIR-GAPS
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申请号: US15464759申请日: 2017-03-21
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公开(公告)号: US20170194259A1公开(公告)日: 2017-07-06
- 发明人: Tai-I Yang , Cheng-Chi Chuang , Yung-Chih Wang , Tien-Lu Lin
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L23/532 ; H01L21/768
摘要:
The present disclosure relates to an interconnect structure. In some embodiments, the interconnect structure has a first conductive body arranged within a first dielectric layer over a substrate. A first air-gap separates sidewalls of the first conductive body from the first dielectric layer. A barrier layer is arranged on sidewalls of the first conductive body at a location between the first conductive body and the first air-gap. The first air-gap is defined by a sidewall of the barrier layer and an opposing sidewall of the first dielectric layer.
公开/授权文献
- US09875967B2 Interconnect structure with air-gaps 公开/授权日:2018-01-23
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