发明申请
- 专利标题: Solution Process for Fabricating High-performance Organic Thin-film Transistors
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申请号: US15401035申请日: 2017-01-08
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公开(公告)号: US20170200895A1公开(公告)日: 2017-07-13
- 发明人: Beng Soon Ong , Yanlian Lei
- 申请人: Hong Kong Baptist University
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; C09D5/24 ; C09D11/52 ; C09D11/102 ; C09D11/108 ; C09D123/06 ; C09D165/00 ; C09D133/12 ; C09D11/107 ; C09D11/106 ; C09D127/06 ; C09D133/20 ; C09D125/06
摘要:
The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
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