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公开(公告)号:US20190081243A1
公开(公告)日:2019-03-14
申请号:US16191460
申请日:2018-11-15
发明人: Beng Soon Ong , Yanlian Lei
IPC分类号: H01L51/00 , C09D11/12 , C09D125/06 , C09D127/06 , C09D133/12 , C09D5/24 , C09D11/108 , C09D11/106 , C09D7/65 , C08L65/00 , C08L33/06 , C08L33/20 , C08L33/12 , C09D165/00 , C08G61/12 , C08L23/06 , C09D11/107 , C09D11/52 , H01L51/05 , C09D133/20
摘要: The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
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2.
公开(公告)号:US10717689B2
公开(公告)日:2020-07-21
申请号:US15688881
申请日:2017-08-29
发明人: Beng Soon Ong , Yong Lu , Carr Hoi Yi Ho , Huanyang Cao , Sin Hang Cheung , Ka Lok Chiu , Shu Kong So
IPC分类号: C07C13/567 , H01L51/00 , C07C255/41 , H01L51/42
摘要: The present invention relates to the provision of an organic compound or compounds containing a fluorenone derivative structure or its substituted derivatives to enhance the thermal stability of organic solar cells.
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公开(公告)号:US10164192B2
公开(公告)日:2018-12-25
申请号:US15401035
申请日:2017-01-08
发明人: Beng Soon Ong , Yanlian Lei
IPC分类号: H01L51/05 , H01L51/00 , C09D11/52 , C09D11/106 , C09D11/107 , C09D5/24 , C09D11/108 , C09D123/06 , C09D125/06 , C09D127/06 , C09D133/12 , C09D165/00 , C09D11/12 , C08G61/12 , C09D7/65 , C09D133/20
摘要: The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor: mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
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公开(公告)号:US20170200895A1
公开(公告)日:2017-07-13
申请号:US15401035
申请日:2017-01-08
发明人: Beng Soon Ong , Yanlian Lei
IPC分类号: H01L51/00 , C09D5/24 , C09D11/52 , C09D11/102 , C09D11/108 , C09D123/06 , C09D165/00 , C09D133/12 , C09D11/107 , C09D11/106 , C09D127/06 , C09D133/20 , C09D125/06
CPC分类号: H01L51/0036 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/212 , C08G2261/3223 , C08G2261/3243 , C08G2261/334 , C08G2261/344 , C08G2261/364 , C08G2261/51 , C08G2261/92 , C09D5/24 , C09D7/65 , C09D11/106 , C09D11/107 , C09D11/108 , C09D11/12 , C09D11/52 , C09D123/06 , C09D125/06 , C09D127/06 , C09D133/12 , C09D133/20 , C09D165/00 , H01L51/0003 , H01L51/0004 , H01L51/0026 , H01L51/0035 , H01L51/004 , H01L51/0043 , H01L51/0053 , H01L51/0533 , H01L51/0541 , H01L51/0545 , H01L51/0558 , H01L51/0566 , C08L65/00 , C08L27/06 , C08L33/06 , C08L33/20 , C08L33/12 , C08L23/06
摘要: The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
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公开(公告)号:US10454033B2
公开(公告)日:2019-10-22
申请号:US15464336
申请日:2017-03-20
发明人: Beng Soon Ong , Yanlian Lei
IPC分类号: H01L51/00 , C09D11/52 , C09D11/106 , C09D11/107 , H01L51/05 , B32B3/10 , C09D11/12 , C08G61/12 , C09D7/65 , C09D5/24 , C09D11/108 , C09D123/06 , C09D125/06 , C09D127/06 , C09D133/12 , C09D165/00 , C09D133/20
摘要: The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
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公开(公告)号:US20170200896A1
公开(公告)日:2017-07-13
申请号:US15464336
申请日:2017-03-20
发明人: Beng Soon Ong , Yanlian Lei
IPC分类号: H01L51/00 , C09D11/107 , C09D11/106 , C09D11/52 , C09D11/102
CPC分类号: H01L51/0036 , B32B3/10 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/212 , C08G2261/3223 , C08G2261/3243 , C08G2261/334 , C08G2261/344 , C08G2261/364 , C08G2261/51 , C08G2261/92 , C09D5/24 , C09D7/65 , C09D11/106 , C09D11/107 , C09D11/108 , C09D11/12 , C09D11/52 , C09D123/06 , C09D125/06 , C09D127/06 , C09D133/12 , C09D133/20 , C09D165/00 , H01L51/0003 , H01L51/0004 , H01L51/0026 , H01L51/0035 , H01L51/004 , H01L51/0043 , H01L51/0053 , H01L51/0533 , H01L51/0541 , H01L51/0545 , H01L51/0558 , H01L51/0566 , Y10T428/24802 , C08L65/00 , C08L27/06 , C08L33/06 , C08L33/20 , C08L33/12 , C08L23/06
摘要: The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
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