Invention Application
- Patent Title: METHODS OF FORMING A LOW-K DIELECTRIC LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
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Application No.: US15349359Application Date: 2016-11-11
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Publication No.: US20170207083A1Publication Date: 2017-07-20
- Inventor: Sunhye HWANG , Myong Woon KIM , Younjoung CHO , Sang lck LEE , Sang Yong JEON , In Kyung JUNG , Wonwoong CHUNG , Jungsik CHOI
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si KR Daejeon
- Assignee: Samsung Electronics Co., Ltd.,DNF Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,DNF Co., Ltd.
- Current Assignee Address: KR Suwon-si KR Daejeon
- Priority: KR10-2016-0006647 20160119
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/768 ; C01B33/12
Abstract:
A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.
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