公开(公告)号：US20230307227A1

公开(公告)日：2023-09-28

申请号：US18189556

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd. ,  DNF Co., Ltd.

Inventor： Sunhye HWANG ,  Sung Gi KIM ,  Jihyun LEE ,  Yujin CHO ,  Seung SON ,  Gyun Sang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

CPC classification number: H01L21/02216 ,  C23C16/45553 ,  H01L21/02164 ,  C23C16/4408 ,  C23C16/401

Abstract: Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.

公开(公告)号：US20230304155A1

公开(公告)日：2023-09-28

申请号：US18189751

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye HWANG ,  Sung Gi Kim ,  Jihyun Lee ,  Yujin Cho ,  Seung Son ,  Gyun Sang Lee ,  Younjoung Cho ,  Byungkeun Hwang

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C23C16/401 ,  C23C16/4408 ,  C23C16/45527

Abstract: Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R2 may be an alkyl group of 1˜6 carbon atoms. R3 may be an alkyl group of 1˜6 carbon atoms.

公开(公告)号：US20240145303A1

公开(公告)日：2024-05-02

申请号：US18378369

申请日：2023-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye HWANG ,  Hyeonggeun LIM ,  Byungkeun HWANG ,  Younjoung CHO

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/321

CPC classification number: H01L21/76883 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/321

Abstract: A selective thin film formation method, comprising forming a structure on a substrate in which a first material film including silicon atoms and oxygen atoms and a second material film different from the first material film are exposed, selectively forming an inhibitor liner only on an exposed surface of the first material film among the first material film and the second material film by applying a compound represented by XmSi(NR1R2)n or (XaR3)mSi(NR1R2)n to the structure, and selectively forming a third material film only on the exposed surface of the second material film among the first material film and the second material film. X is a halogen atom, R1, R2, and R3 are each independently an alkyl group, an alkenyl group, an allyl group, or a heterocyclic group, a, m, and n are each independently an integer of 1 to 3, and m+n=4.

公开(公告)号：US20230406822A1

公开(公告)日：2023-12-21

申请号：US18209583

申请日：2023-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye HWANG ,  Sunggi KIM ,  Yeonghun KIM ,  Gyunsang LEE ,  Jihyun LEE ,  Gyuhee PARK ,  Seung SON ,  Younjoung CHO ,  Byungkeun HWANG

IPC: C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/02

CPC classification number: C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/0214 ,  H01L21/02219 ,  H01L21/02216 ,  H01L21/0228

Abstract: A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):


R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q,  Chemical Formula (1)



wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.

公开(公告)号：US20240222467A1

公开(公告)日：2024-07-04

申请号：US18243251

申请日：2023-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jieun YUN ,  Sunhye HWANG ,  Gyeom KIM ,  Ji Young PARK ,  Sangmoon LEE

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L29/66439 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/775

Abstract: A method of manufacturing an integrated circuit device, the method including forming a structure on a substrate, a semiconductor film and an insulating film being exposed in the structure, and selectively forming a silicon germanium layer only on the semiconductor film by using a process gas, the process gas including a disilane compound having at least two chlorine atoms, a germanium element-containing gas, and hydrogen gas.

公开(公告)号：US20240213017A1

公开(公告)日：2024-06-27

申请号：US18228220

申请日：2023-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghun SUNG ,  Sunhye HWANG ,  Sangho RHA ,  Seungjae SIM ,  Younseok CHOI ,  Byungkeun HWANG ,  Youn Joung CHO

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/311

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H10B43/27

Abstract: A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a Si—H functional group, and a C1-C10 oxy group or a C1-C10 organoamino group.

公开(公告)号：US20230407051A1

公开(公告)日：2023-12-21

申请号：US18206187

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun LEE ,  Sunggi KIM ,  Yujin CHO ,  Sunhye HWANG ,  Seung SON ,  Gyunsang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC: C08K5/5435 ,  C23C16/40 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

CPC classification number: C08K5/5435 ,  C23C16/401 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

Abstract: A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):

公开(公告)号：US20210301388A1

公开(公告)日：2021-09-30

申请号：US17037934

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye HWANG ,  Wonwoong CHUNG ,  Younjoung CHO ,  Youngha SONG ,  Yonghun SHIN ,  Byungkil LEE ,  Sungdo LEE ,  Jinhee LEE

IPC: C23C14/24 ,  C23C16/455 ,  F17C1/14

Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

公开(公告)号：US20170207083A1

公开(公告)日：2017-07-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye HWANG ,  Myong Woon KIM ,  Younjoung CHO ,  Sang lck LEE ,  Sang Yong JEON ,  In Kyung JUNG ,  Wonwoong CHUNG ,  Jungsik CHOI

IPC: H01L21/02 ,  H01L21/768 ,  C01B33/12

CPC classification number: H01L21/02208 ,  C01B33/126 ,  C23C16/00 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5329 ,  H01L2221/1047

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.