公开(公告)号：US20220310407A1

公开(公告)日：2022-09-29

申请号：US17701846

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohoon KIM ,  Wonwoong CHUNG ,  Taehyung KIM ,  Heejun PARK ,  Handuck SONG ,  Heonjong JEONG ,  Younglae KIM ,  Byeongok CHO

IPC: H01L21/467 ,  H01L21/311 ,  C09K13/00

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

公开(公告)号：US20240266291A1

公开(公告)日：2024-08-08

申请号：US18479211

申请日：2023-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunyoung LEE ,  Wei GUO ,  Wulin HE ,  Buseo CHOI ,  Sanghyun PARK ,  Wonwoong CHUNG

IPC: H01L23/532 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53219 ,  H01L21/32051 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/5329

Abstract: A material including an alloy including aluminum of 99% by weight to 99.8% by weight, copper of 0.1% by weight to 0.5% by weight, and scandium of 0.1% by weight to 0.5% by weight, a metal line in a semiconductor device including the material, and a method for forming the metal line in the semiconductor device may be provided.

公开(公告)号：US20240194604A1

公开(公告)日：2024-06-13

申请号：US18357403

申请日：2023-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunyoung LEE ,  Wonwoong CHUNG ,  Buseo CHOI ,  Kkotchorong PARK ,  Seulgi BAE ,  Uisuk JUNG ,  Dong-Chan LIM

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53223 ,  H01L21/76864 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266

Abstract: The described technology relates generally to a material for a metal line in a semiconductor device including an alloy including aluminum as a main material, copper, and an element X, wherein the element X has 1) a coefficient of thermal expansion (CTE) of greater than about 0.55 ppm/K and less than about 5 ppm/K, 2) a melting point (MP) of greater than about 3000° C., and 3) electronegativity of greater than about 2.2, a metal line in a semiconductor device including the alloy, and a method of forming a metal line in a semiconductor device.

公开(公告)号：US20240294829A1

公开(公告)日：2024-09-05

申请号：US18376034

申请日：2023-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock HAN ,  Jinkoo PARK ,  Do Hoon KIM ,  Hoin KANG ,  Bongsuk KIM ,  Kyungeun LEE ,  Wonwoong CHUNG

IPC: C09K13/00 ,  H01L21/311

CPC classification number: C09K13/00 ,  H01L21/31116

Abstract: An etching gas and an etching method, the etching gas includes hydrogen gas; a halogen gas; a first gas; and a second gas, wherein the first gas includes a phosphorus atom, and the second gas includes a carbon atom and two or more halogen atoms that are different from each other.

公开(公告)号：US20210301388A1

公开(公告)日：2021-09-30

申请号：US17037934

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye HWANG ,  Wonwoong CHUNG ,  Younjoung CHO ,  Youngha SONG ,  Yonghun SHIN ,  Byungkil LEE ,  Sungdo LEE ,  Jinhee LEE

IPC: C23C14/24 ,  C23C16/455 ,  F17C1/14

Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

公开(公告)号：US20170207083A1

公开(公告)日：2017-07-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye HWANG ,  Myong Woon KIM ,  Younjoung CHO ,  Sang lck LEE ,  Sang Yong JEON ,  In Kyung JUNG ,  Wonwoong CHUNG ,  Jungsik CHOI

IPC: H01L21/02 ,  H01L21/768 ,  C01B33/12

CPC classification number: H01L21/02208 ,  C01B33/126 ,  C23C16/00 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5329 ,  H01L2221/1047

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.