Invention Application
- Patent Title: HIGH RATE DEPOSITION SYSTEMS AND PROCESSES FOR FORMING HERMETIC BARRIER LAYERS
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Application No.: US15432453Application Date: 2017-02-14
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Publication No.: US20170218503A1Publication Date: 2017-08-03
- Inventor: Robert Alan Bellman , Ta-Ko Chuang , Robert George Manley , Mark Alejandro Quesada , Paul Arthur Sachenik
- Applicant: Corning Incorporated
- Main IPC: C23C14/35
- IPC: C23C14/35 ; C23C14/54 ; C23C14/10
Abstract:
A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.
Information query
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