- 专利标题: METHODS FOR IGNITING A PLASMA IN A SUBSTRATE PROCESSING CHAMBER
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申请号: US15409195申请日: 2017-01-18
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公开(公告)号: US20170221685A1公开(公告)日: 2017-08-03
- 发明人: Shouyin ZHANG , Fuhong ZHANG , Joung Joo LEE
- 申请人: APPLIED MATERIALS, INC.
- 主分类号: H01J37/34
- IPC分类号: H01J37/34 ; C23C14/35 ; H01J37/32
摘要:
Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.
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