公开(公告)号：US20230130106A1

公开(公告)日：2023-04-27

申请号：US17512390

申请日：2021-10-27

Applicant: Applied Materials, Inc.

Inventor： Sireesh ADIMADHYAM ,  Shouyin ZHANG

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/54

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.

公开(公告)号：US20170253959A1

公开(公告)日：2017-09-07

申请号：US15448996

申请日：2017-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/54

CPC classification number: C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76871 ,  H01L21/76879

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

公开(公告)号：US20220020577A1

公开(公告)日：2022-01-20

申请号：US17490840

申请日：2021-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20210071294A1

公开(公告)日：2021-03-11

申请号：US17101933

申请日：2020-11-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: C23C14/35 ,  C23C14/54 ,  H01J37/34

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.

公开(公告)号：US20230402271A1

公开(公告)日：2023-12-14

申请号：US18237934

申请日：2023-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3458 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3411 ,  C23C14/345 ,  H01J37/3441 ,  H01J37/3402 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20170221685A1

公开(公告)日：2017-08-03

申请号：US15409195

申请日：2017-01-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Shouyin ZHANG ,  Fuhong ZHANG ,  Joung Joo LEE

IPC: H01J37/34 ,  C23C14/35 ,  H01J37/32

CPC classification number: H01J37/3447 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/3405 ,  H01J37/3438 ,  H01J37/3444

Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.