Invention Application
- Patent Title: SURFACE PASSIVATION OF HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS
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Application No.: US15490494Application Date: 2017-04-18
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Publication No.: US20170222067A1Publication Date: 2017-08-03
- Inventor: Sean M. Seutter , Mehrdad M. Moslehi
- Applicant: Solexel, Inc.
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/18
Abstract:
Stable surface passivation on a crystalline silicon substrate is provided by forming a more heavily doped region as a front surface field and/or a doped dielectric layer under a passivation layer on the silicon substrate surface. A passivation layer is deposited on the front surface field and/or doped dielectric layer.
Information query
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