Invention Application
- Patent Title: MULTI-CELL STRUCTURE FOR NON-VOLATILE RESISTIVE MEMORY
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Application No.: US15136872Application Date: 2016-04-22
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Publication No.: US20170242595A1Publication Date: 2017-08-24
- Inventor: Dimin NIU , Mu-Tien CHANG , Hongzhong ZHENG
- Applicant: Samsung Electronics Co., Ltd.
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/10 ; G11C13/00

Abstract:
A non-volatile memory comprises an array of a plurality of non-volatile memory cells, a controller coupled to the array, and an evaluator coupled to an output of the array. In a first operational mode, the controller receives a logical address and selects one non-volatile memory cell for access. In a second operational mode, and the controller receives a logical address and selects N non-volatile memory cells for access in which N is an integer greater than 1. If the logical address is for a read access, in the first operational mode the evaluator is disabled and the read-address output of the array corresponds to one selected non-volatile memory cell, and in the second operational mode the evaluator determines an read-address output corresponding to the received logical address based on a read output of the N selected non-volatile memory cells.
Public/Granted literature
- US10929026B2 Multi-cell structure for non-volatile resistive memory Public/Granted day:2021-02-23
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