A first read operation is performed using a first voltage level to read data from a memory array. An instant bit count corresponding to a number of bits in the data read from the memory array is determined. A recorded bit count corresponding to a number of bits in the data that was written at a time of writing the data to the memory array is accessed. A difference between the instant bit count and the recorded bit count is obtained. Conditioned on determining that the difference is less than or equal to a first threshold value, the data read from the memory array is output using the first read operation. Conditioned on determining that the difference is greater than the first threshold value, a second read operation is performed using a second voltage level that is distinct from the first voltage level.