Invention Application
- Patent Title: FET INCLUDING AN INGAAS CHANNEL AND METHOD OF ENHANCING PERFORMANCE OF THE FET
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Application No.: US15346535Application Date: 2016-11-08
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Publication No.: US20170271474A1Publication Date: 2017-09-21
- Inventor: Borna J. Obradovic , Titash Rakshit , Mark S. Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/088 ; H01L29/20 ; H01L29/78 ; H01L29/06 ; H01L29/423
Abstract:
According to an embodiment of the present invention, a method of manufacturing a FET device having a set BTBT leakage and a maximum VDD includes: determining an x value in InxGa1−xAs according to the BTBT leakage and the maximum VDD, and forming a channel utilizing InxGa1−xA, wherein x is not 0.53.
Public/Granted literature
- US10008580B2 FET including an InGaAs channel and method of enhancing performance of the FET Public/Granted day:2018-06-26
Information query
IPC分类:
