An N type lateral double-diffused metal oxide semiconductor field effect transistor (200) includes a substrate (202); a first N well (204) formed on the substrate; a second N well (206), a first P well (208), a third N well (210) and a fourth N well (212); a source lead-out region (214) formed on the first P well (208); a drain lead-out region (216) formed on the fourth N well (212); a first gate lead-out region formed on surfaces of the second N well (206) and the first P well (208); and a second gate lead-out region formed on surfaces of the first P well (208) and the third N well (210). The first gate lead-out region and the second gate lead-out region are respectively led out by means of metal wires, and then are connected to serve as a gate.