公开(公告)号：US20180190815A1

公开(公告)日：2018-07-05

申请号：US15541661

申请日：2015-09-16

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Guangsheng ZHANG ,  Sen ZHANG ,  Peng BIAN ,  Xiaolong HU

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L29/49 ,  H01L29/36 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L29/7816 ,  H01L21/8238 ,  H01L21/823814 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0649 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/42368 ,  H01L29/4916 ,  H01L29/66681 ,  H01L29/7817 ,  H01L29/7831 ,  H01L29/7835

Abstract: A high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10) comprises: a substrate (100); an N-type lateral double-diffused metal oxide semiconductor field effect transistor (200) formed on the substrate (100); and a P-type metal oxide semiconductor field effect transistor (300) formed at a drain of the N-type lateral double-diffused metal oxide semiconductor field effect transistor (200); wherein a gate of the P-type metal oxide semiconductor field effect transistor (300) serves as a gate of the high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10); a drain of the P-type metal oxide semiconductor field effect transistor (300) serves as a drain of the high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10); a source of the N-type lateral double-diffused metal oxide semiconductor field effect transistor (200) serves as a source of the high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10).

公开(公告)号：US20170271505A1

公开(公告)日：2017-09-21

申请号：US15320589

申请日：2015-07-31

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Xiaolong HU ,  Guangsheng ZHANG ,  Peng BIAN ,  Sen ZHANG

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/49 ,  H01L29/10

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/4916 ,  H01L29/735 ,  H01L29/7831

Abstract: An N type lateral double-diffused metal oxide semiconductor field effect transistor (200) includes a substrate (202); a first N well (204) formed on the substrate; a second N well (206), a first P well (208), a third N well (210) and a fourth N well (212); a source lead-out region (214) formed on the first P well (208); a drain lead-out region (216) formed on the fourth N well (212); a first gate lead-out region formed on surfaces of the second N well (206) and the first P well (208); and a second gate lead-out region formed on surfaces of the first P well (208) and the third N well (210). The first gate lead-out region and the second gate lead-out region are respectively led out by means of metal wires, and then are connected to serve as a gate.