- 专利标题： SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
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申请号： US15604646申请日： 2017-05-24
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公开(公告)号： US20170278936A1公开(公告)日： 2017-09-28
- 发明人: Hyun NAMKOONG , Dong-Kyum KIM , Jung-Hwan KIM , Jung Geun JEE , Han-Vit YANG , Ji-Man YOO
- 申请人： Hyun NAMKOONG , Dong-Kyum KIM , Jung-Hwan KIM , Jung Geun JEE , Han-Vit YANG , Ji-Man YOO
- 优先权： KR10-2015-0045245 20150331
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L27/11519 ; H01L29/792 ; H01L27/11582 ; H01L27/11521 ; H01L21/28 ; H01L27/11565 ; H01L29/66 ; H01L29/788
摘要：
A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.
公开/授权文献
- US09905664B2 Semiconductor devices and methods of manufacturing the same 公开/授权日：2018-02-27