Invention Application
- Patent Title: HIGH-VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTORS
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Application No.: US15223614Application Date: 2016-07-29
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Publication No.: US20170301781A1Publication Date: 2017-10-19
- Inventor: Timothy E. Boles , Douglas Carlson , Anthony Kaleta
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee Address: US MA Lowell
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/40 ; H01L29/20 ; H01L29/205 ; H01L29/47 ; H01L29/423
Abstract:
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.
Public/Granted literature
- US10541323B2 High-voltage GaN high electron mobility transistors Public/Granted day:2020-01-21
Information query
IPC分类:
