Invention Application
- Patent Title: HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE
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Application No.: US15223455Application Date: 2016-07-29
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Publication No.: US20170301798A1Publication Date: 2017-10-19
- Inventor: Anthony Kaleta , Douglas Carlson , Timothy E. Boles
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee Address: US MA Lowell
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/66 ; H01L29/205 ; H01L21/761 ; H01L29/20 ; H01L29/06 ; H02M7/00 ; H01L29/40
Abstract:
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
Public/Granted literature
- US10651317B2 High-voltage lateral GaN-on-silicon Schottky diode Public/Granted day:2020-05-12
Information query
IPC分类:
