An integrated circuit device as provided herein may include a device region and an inter-device isolation region. Within the device region, a fin-type active region may protrude from a substrate, and opposite sidewalls of the fin-type active region may be covered by an inner isolation layer. An outer isolation layer may fill an outer deep trench in the inter-device isolation region. The inner isolation layer may extend away from the device region at an inner sidewall of the outer deep trench and into the inter-device isolation region. There may be multiple fin-type active regions, and trenches therebetween. The outer deep trench and the trenches between the plurality of fin-type active regions may be of different heights. The integrated circuit device and methods of manufacturing described herein may reduce a possibility that various defects or failures may occur due to an unnecessary fin-type active region remaining around the device region.