Invention Application
- Patent Title: MULTI-LEVEL MEMORY WITH DIRECT ACCESS
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Application No.: US15640373Application Date: 2017-06-30
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Publication No.: US20170337009A1Publication Date: 2017-11-23
- Inventor: Blaise FANNING , Shekoufeh QAWAMI , Raymond S. Tetrick , Frank T. HADY
- Applicant: Intel Corporation
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/02

Abstract:
Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
Public/Granted literature
- US10241710B2 Multi-level memory with direct access Public/Granted day:2019-03-26
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