公开(公告)号：US11042297B2

公开(公告)日：2021-06-22

申请号：US16417310

申请日：2019-05-20

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Mark A. Schmisseur ,  Raymond S. Tetrick ,  Robert J. Royer, Jr. ,  David B. Minturn ,  Shane Matthews

IPC: G06F3/06 ,  G06F12/02 ,  G06F13/16 ,  G06F13/28

Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.

公开(公告)号：US09678666B2

公开(公告)日：2017-06-13

申请号：US14789816

申请日：2015-07-01

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Mark A. Schmisseur ,  Raymond S. Tetrick ,  Robert J. Royer, Jr. ,  David B. Minturn ,  Shane Matthews

IPC: G06F12/02 ,  G06F3/06 ,  G06F13/16 ,  G06F13/28

CPC classification number: G06F3/0604 ,  G06F3/0629 ,  G06F3/0632 ,  G06F3/0634 ,  G06F3/0644 ,  G06F3/0664 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/0246 ,  G06F13/16 ,  G06F13/28 ,  G06F2212/7206

Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.

公开(公告)号：US10241710B2

公开(公告)日：2019-03-26

申请号：US15640373

申请日：2017-06-30

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Shekoufeh Qawami ,  Raymond S. Tetrick ,  Frank T. Hady

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02 ,  G06F12/10 ,  G11C16/00 ,  G11C7/10 ,  G06F12/08 ,  G06F12/1009 ,  G11C11/56

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

公开(公告)号：US20170075616A1

公开(公告)日：2017-03-16

申请号：US15214005

申请日：2016-07-19

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Shekoufeh Qawami ,  Raymond S. Tetrick ,  Frank T. Hady

IPC: G06F3/06

CPC classification number: G06F3/0644 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/023 ,  G06F12/0238 ,  G06F12/0246 ,  G06F12/08 ,  G06F12/10 ,  G06F12/1009 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/7201 ,  G06F2212/7204 ,  G11C7/1006 ,  G11C11/56 ,  G11C16/00 ,  Y02D10/13

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract translation: 描述具有直接访问的多级存储器的示例。 示例包括指定用作计算机系统的存储器的非易失性随机存取存储器（NVRAM）的量。 示例还包括指定第二数量的NVRAM以用作计算设备的存储。 示例还包括重新指定第一数量的NVRAM的至少第一部分作为用作存储器的存储器。

公开(公告)号：US09430151B2

公开(公告)日：2016-08-30

申请号：US14879004

申请日：2015-10-08

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Shekoufeh Qawami ,  Raymond S. Tetrick ,  Frank T. Hady

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02 ,  G06F12/10 ,  G11C16/00 ,  G11C7/10 ,  G06F12/08 ,  G11C11/56

CPC classification number: G06F3/0644 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/023 ,  G06F12/0238 ,  G06F12/0246 ,  G06F12/08 ,  G06F12/10 ,  G06F12/1009 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/7201 ,  G06F2212/7204 ,  G11C7/1006 ,  G11C11/56 ,  G11C16/00 ,  Y02D10/13

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract translation: 描述具有直接访问的多级存储器的示例。 示例包括指定用作计算机系统的存储器的非易失性随机存取存储器（NVRAM）的量。 示例还包括指定第二数量的NVRAM以用作计算设备的存储。 示例还包括重新指定第一数量的NVRAM的至少第一部分作为用作存储器的存储器。

公开(公告)号：US10817201B2

公开(公告)日：2020-10-27

申请号：US16363576

申请日：2019-03-25

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Shekoufeh Qawami ,  Raymond S. Tetrick ,  Frank T. Hady

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02 ,  G06F12/10 ,  G06F12/08 ,  G11C16/00 ,  G11C7/10 ,  G06F12/1009 ,  G11C11/56

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

公开(公告)号：US20170337009A1

公开(公告)日：2017-11-23

申请号：US15640373

申请日：2017-06-30

Applicant: Intel Corporation

Inventor： Blaise FANNING ,  Shekoufeh QAWAMI ,  Raymond S. Tetrick ,  Frank T. HADY

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0644 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/023 ,  G06F12/0238 ,  G06F12/0246 ,  G06F12/08 ,  G06F12/10 ,  G06F12/1009 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/7201 ,  G06F2212/7204 ,  G11C7/1006 ,  G11C11/56 ,  G11C16/00 ,  Y02D10/13

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

公开(公告)号：US20160110106A1

公开(公告)日：2016-04-21

申请号：US14879004

申请日：2015-10-08

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Shekoufeh Qawami ,  Raymond S. Tetrick ,  Frank T. Hady

IPC: G06F3/06

CPC classification number: G06F3/0644 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/023 ,  G06F12/0238 ,  G06F12/0246 ,  G06F12/08 ,  G06F12/10 ,  G06F12/1009 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/7201 ,  G06F2212/7204 ,  G11C7/1006 ,  G11C11/56 ,  G11C16/00 ,  Y02D10/13

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract translation: 描述具有直接访问的多级存储器的示例。 示例包括指定用作计算机系统的存储器的非易失性随机存取存储器（NVRAM）的量。 示例还包括指定第二数量的NVRAM以用作计算设备的存储。 示例还包括重新指定第一数量的NVRAM的至少第一部分作为用作存储器的存储器。

公开(公告)号：US10296217B2

公开(公告)日：2019-05-21

申请号：US15618170

申请日：2017-06-09

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Mark A. Schmisseur ,  Raymond S. Tetrick ,  Robert J. Royer, Jr. ,  David B. Minturn ,  Shane Matthews

IPC: G06F3/06 ,  G06F12/02 ,  G06F13/16 ,  G06F13/28

Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.

公开(公告)号：US09703502B2

公开(公告)日：2017-07-11

申请号：US15214005

申请日：2016-07-19

Applicant: Intel Corporation

Inventor： Blaise Fanning ,  Shekoufeh Qawami ,  Raymond S. Tetrick ,  Frank T. Hady

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/1009 ,  G06F12/08 ,  G06F12/10 ,  G06F12/02

CPC classification number: G06F3/0644 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/023 ,  G06F12/0238 ,  G06F12/0246 ,  G06F12/08 ,  G06F12/10 ,  G06F12/1009 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/7201 ,  G06F2212/7204 ,  G11C7/1006 ,  G11C11/56 ,  G11C16/00 ,  Y02D10/13

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.