Invention Application
- Patent Title: METHOD AND APPARATUS FOR CONTROLLING VOLTAGE OF DOPED WELL IN SUBSTRATE
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Application No.: US15164129Application Date: 2016-05-25
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Publication No.: US20170345720A1Publication Date: 2017-11-30
- Inventor: Hsin-Pang Lu , Hsin-Wen Chen
- Applicant: United Microelectronics Corp.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/66 ; G05F1/56 ; H01L49/02 ; G01R31/26
Abstract:
A method for controlling voltage of a doped well in a substrate is provided. The substrate and the doped well are in different conductive type. The method includes applying a substrate voltage to the substrate while a well power for applying a well voltage to the doped well is turned off. The method also includes detecting a voltage level of one of the doped well and the substrate to judge whether or not a voltage target is reached. The well power is turned on to apply the well voltage to the doped well when the voltage level as detected reaches to the voltage target.
Public/Granted literature
- US10352986B2 Method and apparatus for controlling voltage of doped well in substrate Public/Granted day:2019-07-16
Information query
IPC分类:
