- 专利标题： HIGH SPEED SEMICONDUCTOR DEVICE
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申请号： US15255370申请日： 2016-09-02
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公开(公告)号： US20170345821A1公开(公告)日： 2017-11-30
- 发明人: Shu Fang FU , Chi-Feng HUANG , Chia-Chung CHEN , Victor Chiang LIANG , Fu-Huan TSAI
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/78 ; H01L21/8238 ; H03K3/03
摘要：
A semiconductor device includes a fin extending from a substrate, a first source/drain feature, a second source/drain feature, and a gate structure on the fin. A distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature.
公开/授权文献
- US10431582B2 High speed semiconductor device 公开/授权日：2019-10-01
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