Invention Application
- Patent Title: Semiconductor Device with Transition Metal Dichalocogenide Hetero-Structure
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Application No.: US15169451Application Date: 2016-05-31
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Publication No.: US20170345944A1Publication Date: 2017-11-30
- Inventor: Shih-Yen Lin , Chi-Wen Liu , Chong-Rong Wu , Xian-Rui Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/24 ; H01L29/66 ; H01L21/02
Abstract:
The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.
Public/Granted literature
- US09899537B2 Semiconductor device with transition metal dichalocogenide hetero-structure Public/Granted day:2018-02-20
Information query
IPC分类:
