公开(公告)号：US09899537B2

公开(公告)日：2018-02-20

申请号：US15169451

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Chong-Rong Wu ,  Xian-Rui Chang

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/41766 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687

Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.

公开(公告)号：US20170345944A1

公开(公告)日：2017-11-30

申请号：US15169451

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Chong-Rong Wu ,  Xian-Rui Chang

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/41766 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687

Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.