公开(公告)号：US09577049B1

公开(公告)日：2017-02-21

申请号：US14989259

申请日：2016-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  NATIONAL TAIWAN UNIVERSITY

Inventor： Shih-Yen Lin ,  Chong-Rong Wu ,  Chi-Wen Liu

IPC: H01L29/24 ,  H01L29/45 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L21/443

CPC classification number: H01L21/443 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/78681

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a semiconductor layer over the substrate. The semiconductor layer includes a transition metal chalcogenide. The semiconductor device structure includes a source electrode and a drain electrode over and connected to the semiconductor layer and spaced apart from each other by a gap. The source electrode and the drain electrode are made of graphene.

Abstract translation: 提供半导体器件结构。 半导体器件结构包括衬底。 半导体器件结构包括在衬底上的半导体层。 半导体层包括过渡金属硫族化物。 半导体器件结构包括在半导体层之上并连接到半导体层并且通过间隙彼此间隔开的源电极和漏电极。 源电极和漏电极由石墨烯制成。

公开(公告)号：US10147603B2

公开(公告)日：2018-12-04

申请号：US15197004

申请日：2016-06-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  National Taiwan University

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Si-Chen Lee ,  Chong-Rong Wu ,  Kuan-Chao Chen

IPC: H01L21/336 ,  H01L21/02 ,  H01L21/324 ,  H01L29/66

Abstract: In a method of fabricating a field effect transistor, a Mo layer is formed on the substrate. The Mo layer is sulfurized to convert it into a MoS2 layer. Source and drain electrodes are formed on the MoS2 layer. The MoS2 layer is treated with low-power oxygen plasma. A gate dielectric layer is formed on the MoS2 layer. A gate electrode is formed on the gate dielectric layer. An input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.

公开(公告)号：US20180151752A1

公开(公告)日：2018-05-31

申请号：US15884729

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  National Taiwan University

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Chong-Rong Wu ,  Xiang-Rui Chang

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/41766 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687

Abstract: A method includes depositing a first transition metal film having a first transition metal on a substrate and performing a first sulfurization process to the first transition metal film, thereby forming a first transition metal sulfide film. The method further includes depositing a second transition metal film having a second transition metal on the first transition metal sulfide film and performing a second sulfurization process to the second transition metal film, thereby forming a second transition metal sulfide film. The first and the second transition metals are different. The method further includes forming a gate stack, and source and drain features over the second transition metal sulfide film. The gate stack is interposed between the source and drain features. The gate stack, source and drain features, the first transition metal sulfide film and the second transition metal sulfide film are configured to function as a hetero-structure transistor.

公开(公告)号：US10164122B2

公开(公告)日：2018-12-25

申请号：US15884729

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  National Taiwan University

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Chong-Rong Wu ,  Xiang-Rui Chang

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/778 ,  H01L29/267 ,  H01L29/417 ,  H01L29/16

Abstract: A method includes depositing a first transition metal film having a first transition metal on a substrate and performing a first sulfurization process to the first transition metal film, thereby forming a first transition metal sulfide film. The method further includes depositing a second transition metal film having a second transition metal on the first transition metal sulfide film and performing a second sulfurization process to the second transition metal film, thereby forming a second transition metal sulfide film. The first and the second transition metals are different. The method further includes forming a gate stack, and source and drain features over the second transition metal sulfide film. The gate stack is interposed between the source and drain features. The gate stack, source and drain features, the first transition metal sulfide film and the second transition metal sulfide film are configured to function as a hetero-structure transistor.

公开(公告)号：US09899537B2

公开(公告)日：2018-02-20

申请号：US15169451

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Chong-Rong Wu ,  Xian-Rui Chang

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/41766 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687

Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.

公开(公告)号：US20190123211A1

公开(公告)日：2019-04-25

申请号：US16224921

申请日：2018-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  National Taiwan University

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Chong-Rong Wu ,  Xiang-Rui Chang

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/778 ,  H01L29/417 ,  H01L29/267 ,  H01L29/16

Abstract: A semiconductor device includes a first film disposed over a semiconductor substrate, the first film comprising a first transition metal dichalcogenide; a second film disposed over the first film, the second film comprising a second transition metal dichalcogenide different from the first transition metal dichalcogenide; source and drain features formed over the second film; a first gate stack formed over the second film and interposed between the source and drain features; and a second gate stack formed over the semiconductor substrate opposite from the first gate stack such that the semiconductor substrate is between the first and second gate stacks.

公开(公告)号：US20170345944A1

公开(公告)日：2017-11-30

申请号：US15169451

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yen Lin ,  Chi-Wen Liu ,  Chong-Rong Wu ,  Xian-Rui Chang

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/41766 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687

Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.