- 专利标题: High-Voltage Stacked Transistor Circuit
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申请号: US15421405申请日: 2017-01-31
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公开(公告)号: US20170346480A1公开(公告)日: 2017-11-30
- 发明人: Kyoung Wook Seok
- 申请人: IXYS Corporation
- 主分类号: H03K17/10
- IPC分类号: H03K17/10
摘要:
A High-Voltage Stacked Transistor Circuit (HVSTC) includes a stack of power transistors coupled in series between a first terminal and a second terminal. The HVSTC also has a control terminal for turning on an off the power transistors of the stack. All of the power transistors of the stack turn on together, and turn off together, so that the overall stack operates like a single transistor having a higher breakdown voltage. Each power transistor, other than the one most directly coupled to the first terminal, has an associated bipolar transistor. In a static on state of the HVSTC, the bipolar transistors are off. The associated power transistors can therefore be turned on. In a static off state of the HVSTC, the bipolar transistors are conductive (in one example, in the reverse active mode) in such a way that they keep their associated power transistors off.
公开/授权文献
- US10014852B2 High-voltage stacked transistor circuit 公开/授权日:2018-07-03
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