Invention Application
- Patent Title: APPARATUS AND METHOD FOR TREATING WAFER
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Application No.: US15171806Application Date: 2016-06-02
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Publication No.: US20170352574A1Publication Date: 2017-12-07
- Inventor: Kei-Wei CHEN , Chun-Hsiung TSAI , Huai-Tei YANG , Shiu-Ko JANGJIAN , Ying-Lang WANG , Ziwei FANG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW HSINCHU
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW HSINCHU
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01L21/3065 ; H01J37/32 ; H01L21/67

Abstract:
An apparatus for treating a wafer is provided. The apparatus includes a platen, a chamber, an etch gas supplier and a tilting mechanism. The chamber has at least one aperture at least partially facing to the platen. The etch gas supplier is fluidly connected to the chamber. The tilting mechanism is coupled with the platen for allowing the platen to have at least one first degree of freedom to tilt relative to the aperture of the chamber.
Information query
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