Invention Application
- Patent Title: METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL
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Application No.: US15691654Application Date: 2017-08-30
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Publication No.: US20170365551A1Publication Date: 2017-12-21
- Inventor: Cathal CASSIDY , Martin SCHREMS , Franz SCHRANK
- Applicant: ams AG
- Priority: EP11190389.4 20111123
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L23/00 ; H01L23/48 ; H01L23/532 ; H01L23/552 ; H01L25/065
Abstract:
A semiconductor substrate is provided with an annular cavity extending from a front side of the substrate to an opposite rear side. A metallization is applied in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side. A solder ball is placed above the opening and a reflow of the solder ball is effected, thereby forming a void of the through-substrate via, the void being covered by the solder ball.
Public/Granted literature
- US09870988B2 Method of producing a semiconductor device with through-substrate via covered by a solder ball Public/Granted day:2018-01-16
Information query
IPC分类:
