- 专利标题： Methods of Reading and Writing Data in a Thyristor Random Access Memory
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申请号： US15426909申请日： 2017-02-07
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公开(公告)号： US20170372766A1公开(公告)日： 2017-12-28
- 发明人: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
- 申请人： Kilopass Technology, Inc.
- 主分类号： G11C11/39
- IPC分类号： G11C11/39 ; H01L29/74 ; H01L27/102
摘要：
A volatile memory array using vertical thyristors is disclosed together with methods of operating the array to read data from and write data to the array.
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