- 专利标题： Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide Substrates for Power Switching and Radio Frequency Applications and Process for Making the Same
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申请号： US15424209申请日： 2017-02-03
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公开(公告)号： US20170373178A1公开(公告)日： 2017-12-28
- 发明人: Saptharishi Sriram , Alexander Suvorov , Christer Hallin
- 申请人： Cree, Inc.
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/423 ; H01L29/20 ; H01L29/167 ; H01L29/66 ; H01L29/16
摘要：
The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.
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