发明申请
- 专利标题: CIRCUIT DESIGN SYSTEM AND SEMICONDUCTOR CIRCUIT DESIGNED BY USING THE SYSTEM
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申请号: US15698978申请日: 2017-09-08
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公开(公告)号: US20180006034A1公开(公告)日: 2018-01-04
- 发明人: Kyong-Taek Lee , Sang-Woo Pae , Hye-Jin Kim , June-Kyun Park , Hyun-Woo Lee
- 申请人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2015-0017098 20150204
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L27/088 ; H01L21/8234 ; H01L27/11
摘要:
A system and method may determine the operating parameters, such as voltages, of MOS transistors within a circuit design by testing or simulation, for example and may identify a MOS transistor operating with its drain voltage higher than its gate voltage in the circuit. The design system and method may substitute a smaller transistor, having a high-k dielectric layer, for the original transistor in the circuit design.
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