公开(公告)号：US20180006034A1

公开(公告)日：2018-01-04

申请号：US15698978

申请日：2017-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyong-Taek Lee ,  Sang-Woo Pae ,  Hye-Jin Kim ,  June-Kyun Park ,  Hyun-Woo Lee

IPC: H01L27/092 ,  H01L27/088 ,  H01L21/8234 ,  H01L27/11

CPC classification number: H01L27/0922 ,  G06F17/5022 ,  G06F17/5045 ,  G06F17/505 ,  G06F17/5081 ,  H01L21/823462 ,  H01L27/088 ,  H01L27/1104

Abstract: A system and method may determine the operating parameters, such as voltages, of MOS transistors within a circuit design by testing or simulation, for example and may identify a MOS transistor operating with its drain voltage higher than its gate voltage in the circuit. The design system and method may substitute a smaller transistor, having a high-k dielectric layer, for the original transistor in the circuit design.

公开(公告)号：US10276571B2

公开(公告)日：2019-04-30

申请号：US15698978

申请日：2017-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyong-Taek Lee ,  Sang-Woo Pae ,  Hye-Jin Kim ,  June-Kyun Park ,  Hyun-Woo Lee

IPC: G06F17/50 ,  H01L27/092 ,  H01L27/088 ,  H01L27/00 ,  H01L27/11 ,  H01L21/8234

Abstract: A system and method may determine the operating parameters, such as voltages, of MOS transistors within a circuit design by testing or simulation, for example and may identify a MOS transistor operating with its drain voltage higher than its gate voltage in the circuit. The design system and method may substitute a smaller transistor, having a high-k dielectric layer, for the original transistor in the circuit design.