Invention Application
- Patent Title: PATTERN FORMING METHOD, PHOTO MASK MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
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Application No.: US15718292Application Date: 2017-09-28
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Publication No.: US20180017865A1Publication Date: 2018-01-18
- Inventor: Hidehiro MOCHIZUKI , Shuji HIRANO , Akira TAKADA
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2015-074104 20150331; JP2015-192628 20150930
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/38 ; G03F7/32 ; G03F7/038 ; G03F7/16 ; G03F1/76 ; G03F7/075 ; G03F7/039 ; G03F7/40 ; G03F7/20

Abstract:
A pattern forming method including a step of coating a substrate with an actinic ray-sensitive or radiation-sensitive resin composition and forming an actinic ray-sensitive or radiation-sensitive film; a step of simultaneously irradiating the actinic ray-sensitive or radiation-sensitive film with a plurality of electron beams; and a step of developing the actinic ray-sensitive or radiation-sensitive film after the irradiation with electron beams is provided. The composition contains a resin (A), a photoacid generator (B), and an acid diffusion control agent (C) and a molar ratio (Qp) between the photoacid generator (B) and the acid diffusion control agent (C), which is represented by Equation (1) is 0.3 or greater. Qp(molar ratio)=Acid diffusion control agent (C)/Photoacid generator (B) (1)
Information query
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