Invention Application
- Patent Title: DYNAMIC LOGIC MEMCAP
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Application No.: US15547105Application Date: 2015-04-27
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Publication No.: US20180017870A1Publication Date: 2018-01-18
- Inventor: Ning GE , Zhiyong LI , Jianhua Yang , R. Stanley Williams
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2015/027767 WO 20150427
- Main IPC: G03F7/16
- IPC: G03F7/16 ; H01L27/24 ; G11C19/28 ; H01L45/00 ; G11C13/00

Abstract:
An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors. A plurality of high dielectric nanometer capacitors may be formed of memristor switch material between the first metal layer and a second metal layer formed over the plurality of high dielectric capacitors. The plurality of high dielectric capacitors may operate as memory storage cells in dynamic logic.
Public/Granted literature
- US10162263B2 Dynamic logic memcap Public/Granted day:2018-12-25
Information query
IPC分类: