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公开(公告)号：US09735355B2
公开(公告)日：2017-08-15
申请号：US14181436
申请日：2014-02-14
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： R. Stanley Williams
CPC classification number: H01L45/08 , G11C13/0007 , G11C13/0009 , G11C2213/52 , G11C2213/53 , G11C2213/56 , G11C2213/77 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/00
Abstract: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
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公开(公告)号：US20150380133A1
公开(公告)日：2015-12-31
申请号：US14845670
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
Abstract translation: 提供与负差分电阻（NDR）相关的装置和方法。 NDR装置包括间隔开的一对电极和设置在其间的至少两种不同的材料。 两种材料之一的特征在于负热膨胀，而另一种材料的特征在于正的热膨胀。 这两种材料的特征还有不同的电阻率。 NDR器件的特征在于包括负差分电阻范围的非线性电阻曲线。 NDR器件根据跨越该对电极的施加电压沿曲线工作。
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公开(公告)号：US08829581B1
公开(公告)日：2014-09-09
申请号：US13866625
申请日：2013-04-19
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Shih-Yuan Wang , Jianhua Yang , Alexandre M. Bratkovski , R. Stanley Williams
CPC classification number: H01L27/249 , B82Y40/00 , H01L45/08 , H01L45/12 , H01L45/1226 , H01L45/146
Abstract: A resistive memory device includes a stack comprising conductor layers and insulator layers, with the edges of the conductor layers and insulating layers exposed on the sides of the stack. An insulator is disposed on a first side of the stack to cover exposed edges of the conductor layers on the first side of the stack. A memory layer disposed over the stack and insulator, such that the memory layer is in electrical contact with edges of the conductor layers on a second side of the stack but is insulated from edges on the first side of the stack by the insulator. A conductive ribbon is disposed over the memory layer to form programmable memory elements where the conductive ribbon crosses edges of the conductor layers on the second side of the stack.
Abstract translation: 电阻式存储器件包括一个包括导体层和绝缘体层的叠层，导体层的边缘和绝缘层暴露在堆叠的侧面。 绝缘体设置在堆叠的第一侧上以覆盖堆叠第一侧上的导体层的暴露边缘。 存储层设置在堆叠和绝缘体之上，使得存储器层与堆叠的第二侧上的导体层的边缘电接触，但是通过绝缘体与堆叠的第一侧上的边缘绝缘。 导电带设置在存储层上方以形成可编程存储器元件，其中导电带跨越堆叠的第二侧上的导体层的边缘。
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公开(公告)号：US20140091270A1
公开(公告)日：2014-04-03
申请号：US13629946
申请日：2012-09-28
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC: H01L45/00 , H01L21/8239
CPC classification number: H01L45/04 , G11C13/0007 , G11C2213/15 , G11C2213/32 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.
Abstract translation: 具有工程开关通道材料的低能忆阻器包括：第一电极; 第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，其中所述开关层包括包含绝缘基质的第一相，其中分散有包含用于形成切换通道的导电复合材料的第二相。
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公开(公告)号：US09558869B2
公开(公告)日：2017-01-31
申请号：US14845670
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
Abstract translation: 提供与负差分电阻（NDR）相关的装置和方法。 NDR装置包括间隔开的一对电极和设置在其间的至少两种不同的材料。 两种材料之一的特征在于负热膨胀，而另一种材料的特征在于正的热膨胀。 这两种材料的特征还有不同的电阻率。 NDR器件的特征在于包括负差分电阻范围的非线性电阻曲线。 NDR器件根据跨越该对电极的施加电压沿曲线工作。
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Patent Agency Ranking
公开(公告)号：US09478738B2
公开(公告)日：2016-10-25
申请号：US14845735
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC classification number: H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
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公开(公告)号：US20140203864A1
公开(公告)日：2014-07-24
申请号：US14181436
申请日：2014-02-14
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： R. Stanley Williams
CPC classification number: H01L45/08 , G11C13/0007 , G11C13/0009 , G11C2213/52 , G11C2213/53 , G11C2213/56 , G11C2213/77 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/00
Abstract: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
Abstract translation: 电驱动开关包括第一电极，第二电极和设置在它们之间的有源区域。 活性区域包括至少一个主要活性区域，其包含至少一种可被掺杂或未掺杂以改变其导电性的材料，以及包含至少一种材料的辅助活性区域，用于提供用作掺杂剂的离子物质的源/ 对于主要活动区域。 还提供了操作开关的方法。
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公开(公告)号：US08779409B2
公开(公告)日：2014-07-15
申请号：US13629946
申请日：2012-09-28
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Riberio , R. Stanley Williams
IPC: H01L47/00
CPC classification number: H01L45/04 , G11C13/0007 , G11C2213/15 , G11C2213/32 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.
Abstract translation: 具有工程开关通道材料的低能忆阻器包括：第一电极; 第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，其中所述开关层包括包含绝缘基质的第一相，其中分散有包含用于形成切换通道的导电复合材料的第二相。
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公开(公告)号：US20180017870A1
公开(公告)日：2018-01-18
申请号：US15547105
申请日：2015-04-27
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning GE , Zhiyong LI , Jianhua Yang , R. Stanley Williams
CPC classification number: G03F7/16 , B41J2/04541 , B41J2/04543 , B41J2/0458 , B41J2/14129 , B41J2202/13 , G11C13/0007 , G11C13/0023 , G11C13/0069 , G11C19/28 , G11C2213/15 , G11C2213/31 , G11C2213/32 , H01L27/10817 , H01L27/2436 , H01L27/2463 , H01L28/87 , H01L28/91 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1675 , H01L45/1683
Abstract: An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors. A plurality of high dielectric nanometer capacitors may be formed of memristor switch material between the first metal layer and a second metal layer formed over the plurality of high dielectric capacitors. The plurality of high dielectric capacitors may operate as memory storage cells in dynamic logic.
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公开(公告)号：US20170229170A1
公开(公告)日：2017-08-10
申请号：US15515317
申请日：2014-10-23
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning GE , Jianhua YANG , Zhiyong LI , R. Stanley Williams
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C7/1006 , G11C7/24 , G11C8/12 , G11C11/5678 , G11C11/5685 , G11C13/0023 , G11C15/046
Abstract: A device for generating a representative logic indicator of grouped memristors is described. The device includes a memristor array. The memristor array includes a number of first memristors having a first set of logic indicators and a number of second memristors having a second set of logic indicators. The second set of logic indicators is different than the first set of logic indicators. Each first memristor is grouped with a corresponding second memristor during a memory read operation to generate a representative logic indicator.
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