Invention Application
- Patent Title: Method of Manufacturing Semiconductor Devices and Semiconductor Device Containing Oxygen-Related Thermal Donors
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Application No.: US15718189Application Date: 2017-09-28
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Publication No.: US20180019306A1Publication Date: 2018-01-18
- Inventor: Johannes Georg Laven , Moriz Jelinek , Hans-Joachim Schulze , Werner Schustereder , Michael Stadtmueller
- Applicant: Infineon Technologies AG
- Priority: DE102015107085.5 20150506
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/739 ; H01L21/324 ; H01L21/8234 ; H01L21/66
Abstract:
A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.
Public/Granted literature
- US10192955B2 Semiconductor device containing oxygen-related thermal donors Public/Granted day:2019-01-29
Information query
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