- 专利标题： Deposition Of Flowable Silicon-Containing Films
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申请号： US15654185申请日： 2017-07-19
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公开(公告)号： US20180025907A1公开(公告)日： 2018-01-25
- 发明人: Lakmal C. Kalutarage , Mark Saly , David Thompson , Abhijit Basu Mallick , Tejasvi Ashok , Pramit Manna
- 申请人： Applied Materials, Inc.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/762
摘要：
Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.
公开/授权文献
- US11515149B2 Deposition of flowable silicon-containing films 公开/授权日：2022-11-29
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