Invention Application
- Patent Title: P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR FORMING P-TYPE OXIDE SEMICONDUCTOR, AND TRANSISTOR WITH THE P-TYPE OXIDE SEMICONDUCTOR
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Application No.: US15621135Application Date: 2017-06-13
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Publication No.: US20180026104A1Publication Date: 2018-01-25
- Inventor: Sung Haeng CHO , Sooji NAM , Chi-Sun HWANG , Su Jae LEE , Kyoung Ik CHO , Jae-Eun PI
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2016-0092259 20160720; KR10-2016-0154389 20161118
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L21/02 ; H01L29/786
Abstract:
Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.
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