- 专利标题： P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR FORMING P-TYPE OXIDE SEMICONDUCTOR, AND TRANSISTOR WITH THE P-TYPE OXIDE SEMICONDUCTOR
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申请号： US15621135申请日： 2017-06-13
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公开(公告)号： US20180026104A1公开(公告)日： 2018-01-25
- 发明人: Sung Haeng CHO , Sooji NAM , Chi-Sun HWANG , Su Jae LEE , Kyoung Ik CHO , Jae-Eun PI
- 申请人： Electronics and Telecommunications Research Institute
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2016-0092259 20160720; KR10-2016-0154389 20161118
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/02 ; H01L29/786
摘要：
Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.
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