- 专利标题: GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
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申请号: US15444226申请日: 2017-02-27
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公开(公告)号: US20180044185A1公开(公告)日: 2018-02-15
- 发明人: Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
- 申请人: Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; B82Y40/00 ; C04B35/653 ; C04B35/622 ; C23C14/06 ; B82Y30/00 ; C04B35/583
摘要:
Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
公开/授权文献
- US1688987A Basin mounting 公开/授权日:1928-10-23
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