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公开(公告)号：US20200156946A1
公开(公告)日：2020-05-21
申请号：US16573804
申请日：2019-09-17
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C04B35/583 , C04B35/622 , C04B35/653 , H01L21/02 , C01B32/20 , C23C14/06
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
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公开(公告)号：US20180044185A1
公开(公告)日：2018-02-15
申请号：US15444226
申请日：2017-02-27
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： H01L21/02 , B82Y40/00 , C04B35/653 , C04B35/622 , C23C14/06 , B82Y30/00 , C04B35/583
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
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公开(公告)号：US20100218801A1
公开(公告)日：2010-09-02
申请号：US12713004
申请日：2010-02-25
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C23C14/06 , C23C14/24 , B32B15/04 , H01L31/042
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
摘要翻译： 公开了主要由sp2键合的原子制成的石墨烯层及相关方法。 一方面，例如，形成石墨膜的方法可以包括在真空下将固体基质加热到小于固体基质的熔点的溶解温度，将碳原子从石墨源溶解到加热的固体基质中 并且以足以从固体基底的至少一个表面上溶解的碳原子形成石墨膜的速率冷却加热的固体基质。 石墨膜形成为基本上没有晶格缺陷。
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公开(公告)号：US20150079352A1
公开(公告)日：2015-03-19
申请号：US14455335
申请日：2014-08-08
申请人： Chien-Min Sung
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C01B31/04
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
摘要翻译： 公开了主要由sp2键合的原子制成的石墨烯层及相关方法。 一方面，例如，形成石墨膜的方法可以包括在真空下将固体基质加热到小于固体基质的熔点的溶解温度，将碳原子从石墨源溶解到加热的固体基质中 并且以足以从固体基底的至少一个表面上溶解的碳原子形成石墨膜的速率冷却加热的固体基质。 石墨膜形成为基本上没有晶格缺陷。
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公开(公告)号：US20170022065A1
公开(公告)日：2017-01-26
申请号：US15052794
申请日：2016-02-24
申请人： Chien-Min Sung
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
摘要翻译： 公开了主要由sp2键合的原子制成的石墨烯层及相关方法。 一方面，例如，形成石墨膜的方法可以包括在真空下将固体基质加热到小于固体基质的熔点的溶解温度，将碳原子从石墨源溶解到加热的固体基质中 并且以足以从固体基底的至少一个表面上溶解的碳原子形成石墨膜的速率冷却加热的固体基质。 石墨膜形成为基本上没有晶格缺陷。
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