- 专利标题： Synthesis of N-Type Thermoelectric Materials, Including Mg-Sn-Ge Materials, and Methods for Fabrication Thereof
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申请号： US15547374申请日： 2015-12-10
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公开(公告)号： US20180047886A1公开(公告)日： 2018-02-15
- 发明人: Zhifeng Ren , Weishu Liu
- 申请人： University of Houston System
- 申请人地址： US TX Houston
- 专利权人： University of Houston System
- 当前专利权人： University of Houston System
- 当前专利权人地址： US TX Houston
- 国际申请： PCT/US2015/065119 WO 20151210
- 主分类号： H01L35/26
- IPC分类号： H01L35/26 ; C22C13/00 ; B22F3/24 ; B22F9/04 ; B22F3/14 ; H01L35/34 ; C22C1/04
摘要：
Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit (ZT) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.
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