A chemical mechanical planarization (CMP) pad conditioning assembly that includes one or more support structures positioned between one or more abrasive regions of the pad conditioning assembly is disclosed. The support structures and abrasive regions can be separated by one or more channels. A top surface of the one or more support structures is not co-planar with the top surface of the abrasive regions of the pad conditioning assembly, and the height of the top surface of the one or more support structures when measured to the pad facing surface of the pad conditioning assembly backing plate is less than the height of the top surfaces of the abrasive regions when measured to the pad facing surface of the pad conditioning assembly.