Invention Application
- Patent Title: ETCHING METHOD AND ETCHING APPARATUS
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Application No.: US15698823Application Date: 2017-09-08
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Publication No.: US20180076051A1Publication Date: 2018-03-15
- Inventor: Kazunori SHINODA , Satoshi SAKAI , Masaru IZAWA , Nobuya MIYOSHI , Hiroyuki KOBAYASHI , Yutaka KOUZUMA , Kenji ISHIKAWA , Masaru HORI
- Applicant: Hitachi High-Technologies Corporation
- Priority: JP2016-176198 20160909
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/311

Abstract:
A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.
Public/Granted literature
- US10325781B2 Etching method and etching apparatus Public/Granted day:2019-06-18
Information query
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