A resistance variable memory apparatus may include a memory circuit configured to include a plurality of blocks, each including a plurality of memory cells. The resistance variable memory apparatus may include a disturbance preventing circuit configured to be driven based on a counting signal corresponding to the number of write access for each of the plurality of blocks, a write command, and an address signal and to allow scrubbing to be performed on a memory cell having a preset scrubbing condition when the counting signal satisfied with the scrubbing condition is output based on the scribing condition according to a physical position of the memory cell in the block.