Invention Application
- Patent Title: APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE
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Application No.: US15827427Application Date: 2017-11-30
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Publication No.: US20180082832A1Publication Date: 2018-03-22
- Inventor: Yoshihiro Ogawa , Tatsuhiko Koide , Shinsuke Kimura , Hisashi Okuchi , Hiroshi Tomita
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2009-281346 20091211
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; H01L21/3213 ; H01L21/311

Abstract:
In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.
Public/Granted literature
- US09991111B2 Apparatus and method of treating surface of semiconductor substrate Public/Granted day:2018-06-05
Information query
IPC分类: