Methods for fabricating fins for a fin-type field-effect transistor (FinFET) and fin structures for a FinFET. A conformal layer is formed that includes respective first portions on sidewalls of first hardmask sections previously formed on a substrate, a recess between the first portions on the sidewalls of each adjacent pair of the first hardmask sections, and a second portion between the substrate and the recess. The conformal layer is constituted by a second material chosen to etch selectively to the first material constituting the first hardmask sections. A spacer is formed in each recess and masks the respective second portion of the conformal layer. The conformal layer is then etched to form second hardmask sections each comprised of one of the second portions of the conformal layer. The substrate is etched with the first and second hardmask sections masking the substrate to form a plurality of fins.