A method of detaching a growth substrate from a layer sequence includes introducing at least one wafer composite into an etching bath containing an etching solution such that the etching solution is located at least in regions within separating trenches, repeatedly varying a pressure of a base pressure prevailing in the etching bath with at least one pressure variation device, and detaching the growth substrate, wherein at least one of 1-3 is satisfied: 1) a buffer chamber attached to the etching bath and connected thereto is provided and the volume variation is effected by a movement of a piston or hydraulic plunger introduced into the buffer chamber, 2) the volume variation is at least partly effected with a compressor attached to the etching bath, and 3) the pressure variation is at least partly effected by at least one of removal of a gas and a liquid from the etching bath or by addition of at least one of the gas and the liquid thereto.